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 应用科技  2018, Vol. 45 Issue (6): 92-96  DOI: 10.11991/yykj.201803006 0

### 引用本文

LI Ziye, GAO Feng, AN Zibo, et al. Preparation of the B-doped SiC using precipitated silica-white as silicon source[J]. Applied Science and Technology, 2018, 45(6), 92-96. DOI: 10.11991/yykj.201803006.

### 文章历史

1. 武汉工程大学 材料科学与工程学院，湖北 武汉 430074;
2. 湖北省环境材料与膜技术工程技术研究中心，湖北 武汉 430074

Preparation of the B-doped SiC using precipitated silica-white as silicon source
LI Ziye1, GAO Feng1, AN Zibo1, XUE Jun1,2, CAO Hong1,2
1. School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China;
2. Engineering Research Center of Environmental Materials and Membrane Technology of Hubei province, Wuhan 430074, China
Abstract: Boron-doped SiC with high specific surface area was prepared by a simple carbothermal reduction method using industrial-grade precipitated silica-white and glucose powder as carbon and silicon sources respectively. It provides an effective method for low cost and large-scale preparation of SiC with high specific surface area. The crystal structure, morphology, surface property and band gap structure of SiC were characterized using X-ray diffraction, scanning electron microscopy, specific surface area analyzer, and ultraviolet-visible absorption spectroscopy. The characterization result indicates that B atoms have doped into the SiC lattice and substituted Si sites. When the roasting temperature is 1350℃, the SiC has the largest specific surface area and a lower band gap. With the B/Si molar ratio increasing, the crystallinity of SiC increased, while the band gap and specific surface area of SiC decreased.
Keywords: carbothermal redction    B    dope    β-SiC    precipitated silica    high surface area    band gap    glucose

1 实验部分 1.1 硼掺杂碳化硅制备

1.2 样品表征

2 结果与讨论 2.1 硼添加量的影响

 $\alpha hv = A{\left( {hv - E_g} \right)^{n/2}}$

2.2 焙烧温度的影响